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Creators/Authors contains: "Ray, Biswajit"

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  1. ; ; ( , Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems)
    In this paper, we propose a new page-writing technique to hide secret information using the threshold voltage variation of programmed memory cells. We demonstrate the proposed technique on the state-of-the-art commercial 3D NAND flash memory chips by utilizing common user mode commands. We explore the design space metrics of interest for data hiding: bit accuracy of public and secret data and detectability of holding secret data. The proposed method ensures more than 97% accuracy of recovered secret data, with negligible accuracy loss in the public data. Our analysis shows that the proposed technique introduces negligible distortions in the threshold voltage distributions. These distortions are lower than the inherent threshold voltage variations of program states. As a result, the proposed method provides a hiding technique that is undetectable, even by a powerful adversary with low-level access to the memory chips. 
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    Free, publicly-accessible full text available July 10, 2024
  2. ; ; ( , 2023 IEEE International Memory Workshop (IMW))
    Free, publicly-accessible full text available May 1, 2024
  3. ; ( , 2023 IEEE International Reliability Physics Symposium (IRPS))
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  4. ; ; ; ; ; ( , IEEE Transactions on Nuclear Science)
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  5. ; ; ( , IEEE Transactions on Electron Devices)
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  6. ; ; ; ; ; ; ( , IEEE Transactions on Device and Materials Reliability)
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  7. ; ; ; ( , ACM International Conference on Systems and Storage)
    Deleting data instantly from NAND flash memories incurs hefty overheads, and increases wear level. Existing solutions involve unlinking the physical page addresses making data inaccessible through standard interfaces, but they carry the risk of data leakage. An all-zero-in-place data overwrite has been proposed as a countermeasure, but it applies only to SLC flash memories. This paper introduces an instant page data sanitization method for MLC flash memories that prevents leakage of deleted information without any negative effects on valid data in shared pages. We implement and evaluate the proposed method on commercial 2D and 3D NAND flash memory chips. 
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  8. ; ; ; ; ; ; ( , 2022 IEEE Radiation Effects Data Workshop (REDW))
    We measure total-ionizing-dose (TID) induced threshold voltage (Vt) loss of a commercial 64-layer triple-levelcell (TLC) 3D NAND memory using user-mode commands. Our experiments show that Vt distributions closely follow Gaussian distributions. At increasing TID, the distributions shift toward lower average values and the distribution widths widen. We calculate exact cell Vt shifts from the pre-irradiation conditions at different TID values. We find that Vt loss (delta_Vt) distributions also follow Gaussian distributions. We also find that delta_Vt values strongly depend on the cell programmed states. 
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  9. ; ; ; ; ; ( , IEEE Transactions on Nuclear Science)
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  10. ; ; ; ; ; ( , IEEE Transactions on Nuclear Science)
    null (Ed.)
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